Skip to content
6CCVD Research

Band offsets of epitaxial cubic boron nitride deposited on polycrystalline diamond via plasma-enhanced chemical vapor deposition

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-10-23
JournalApplied Physics Letters
AuthorsJoseph Shammas, Yu Yang, Xingye Wang, Franz A. Koeck, Martha R. McCartney
InstitutionsArizona State University
Citations32

Abstract

Section titled ā€œAbstractā€

Cubic boron nitride (c-BN) has been deposited on nitrogen-doped polycrystalline diamond films via plasma-enhanced chemical vapor deposition employing fluorine chemistry. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were utilized to characterize the c-BN/diamond interface. TEM observations indicated local epitaxy of c-BN on diamond, while h-BN was also observed at the interface. XPS measurements indicated that c-BN growth continued after nucleation. The band offsets between c-BN and diamond were deduced from XPS measurements. The c-BN valence band maximum (VBM) was 0.8 Ā± 0.1 eV above the diamond VBM, which corresponded to the c-BN conduction band minimum (CBM) of 1.7 Ā± 0.1 eV above the diamond CBM. Comparison with offsets predicted by theoretical calculations suggests that a C-N interface was obtained.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1991 - Growth and characterization of epitaxial cubic boron nitride films on silicon [Crossref]
  2. 2014 - 3.24 - Cubic boron nitride films: Properties and applications
  3. 1973 - Nonmetallic crystals with high thermal conductivity [Crossref]
  4. 2005 - Review of synthesis and properties of cubic boron nitride (c-BN) thin films [Crossref]
  5. 1998 - Activation energy in low compensated homoepitaxial boron-doped diamond films [Crossref]
  6. 2005 - n-type doping of (001)-oriented single-crystalline diamond by phosphorus [Crossref]
  7. 1993 - High pressure synthesis of semiconducting Be-doped polycrystalline cubic boron nitride and its electrical properties [Crossref]
  8. 2015 - In situ Si doping of heteroepitaxially grown c-BN thin films at different temperatures [Crossref]
  9. 1993 - Characterization of mixed-phase BN thin films deposited by plasma CVD [Crossref]
  10. 2008 - GaN-Based RF Power Devices and Amplifiers [Crossref]

Reads Similar to This

Energetics of carbon and nitrogen impurities and their interactions with vacancy in vanadium Probing Dynamics of a Two-Dimensional Dipolar Spin Ensemble Using Single Qubit Sensor Electrochemical potential control of charge state and fluorescence of nitrogen vacancy centers in nanodiamonds