Deep depletion concept for diamond MOSFET
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2017-10-23 |
| Journal | Applied Physics Letters |
| Authors | T. T. Pham, Nicolas Rouger, CĂ©dric Masante, Gauthier Chicot, Florin Udrea |
| Institutions | Université Fédérale de Toulouse Midi-Pyrénées, Centre National de la Recherche Scientifique |
| Citations | 63 |
Abstract
Section titled âAbstractâA stable deep depletion regime is demonstrated in metal oxide semiconductor capacitors using p-type oxygen-terminated (100) diamond as a semiconductor and Al2O3 deposited by Atomic Layer Deposition at 380 °C. Current voltage I(V) and capacitance voltage C(V) measurements were performed to evaluate the effectiveness of diamond semiconductor gate control. An effective modulation of the space charge region width is obtained by the gate bias, where the deep depletion regime is demonstrated for a positive gate bias. The deep depletion concept is described and proposed for MOSFET devices. Finally, a proof of concept of diamond deep depletion MOSFETs is presented.