Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-10-13 |
| Journal | Nanotechnology |
| Authors | Z. A. K. Durrani, Mervyn Jones, Chen Wang, Marijke Scotuzzi, K. HAGEN |
| Institutions | Imperial College London, Delft University of Technology |
| Citations | 8 |
Abstract
Section titled āAbstractāNanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ā¼20 nm, integrated within ā¼100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ā¼20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and āCoulomb diamondsā observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.