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6CCVD Research

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-10-16
AuthorsRonggui Yang

Abstract

Section titled ā€œAbstractā€

Abstract : The objective of this project is to experimentally study the transient non-diffusive phonon transport in gallium nitride (GaN) based high electron mobility transistor (HEMT) devices. Using the ultrafast pump-probe thermoreflectance, we found that the measured thermal conductivity of the GaN substrate depends on the heating frequency and the metal thin film thickness. This novel phenomenon observed suggest that phonon transport in GaN would depend on both the structural and operating frequency.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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