Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-10-01 |
| Authors | Thomas Gerrer, V. Cimalla, Patrick Waltereit, S. MĆ¼ller, Fouad Benkelifa |
| Institutions | Fraunhofer Institute for Applied Solid State Physics |
| Citations | 5 |
Abstract
Section titled āAbstractāWe present a new bonding process for galliumnitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout) levels. Also, comparisons of 2x1 mm GaN-diodes on Si, PCD, and SCD reveal significantly increased power levels. In summary, we show a promising new GaN-on-diamond technology for future high power, microwave GaN-device applications.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Developing a New Thermal Paradigm for Gallium Nitride (GaN) Device Technology
- 2014 - Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
- 0 - 3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350c channel temperature
- 2016 - GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz [Crossref]