Modelling of GaN high electron mobility transistor on diamond substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-03-22 |
| Journal | IET Microwaves Antennas & Propagation |
| Authors | Anwar Jarndal, Xuekun Du, Yuehang Xu |
| Institutions | University of Calgary, University of Electronic Science and Technology of China |
| Citations | 8 |
Abstract
Section titled āAbstractāAbstract A reliable smallāsignal modelling approach has been developed and applied on GaNāonādiamond high electron mobility transistor. The extrinsic elementsā extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour of the intrinsic transistor. The frequency independence of the intrinsic elements at active multibias condition has been considered as another objective in addition to measurementsā fitting. Physical relevant values for the model elements have been obtained. The model accuracy was also validated by means of S āparameters simulation, which showed a very good fitting of the measured data.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - GaNāonādiamond: The next GaN