Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-11-30 |
| Journal | IEEE Electron Device Letters |
| Authors | Mohd Syamsul, Nobutaka Oi, S. Okubo, Taisuke Kageura, Hiroshi Kawarada |
| Institutions | Waseda University |
| Citations | 24 |
Abstract
Section titled “Abstract”The exceptional performance of diamondbased field-effect transistor technology is not restricted to devices that use single crystallinediamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length (L <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>GD</sub> ) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>ON</sub> /I <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>OFF</sub> ratio of 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>9</sup> were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.