Substrate effects on channel temperature distribution of AlGaN/GaN HEMT
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-12-01 |
| Journal | 2017 3rd International Conference on Electrical Information and Communication Technology (EICT) |
| Authors | Amit Kumer Podder, A. S. M. Jannatul Islam, S. M. Hasanuzzaman, Md. Sherajul Islam, Ashraful G. Bhuiyan |
| Institutions | Khulna University of Engineering and Technology |
| Citations | 3 |
Abstract
Section titled āAbstractāThe channel temperature distribution of AlGaN/GaN HEMT on various substrates including Sapphire, Si, SiC, and Diamond is presented. A 2D electro-thermal model is used here. Joule heating is calculated and incorporated into the thermal model to find the temperature distribution which gives an idea of the maximum temperature in the channel. A comparative study is made on different substrates at different power density. The simulated results will be helpful for better temperature managing of AlGaN/GaN HEMT.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Theoretical analysis of substrate effects on the DC performance of AlGaN/GaN high electron mobility transistor