Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-12-01 |
| Journal | IOP Conference Series Materials Science and Engineering |
| Authors | Yong Li, Shangsheng Li, Mousheng Song, Yanchao She, Qiang Wang |
| Institutions | Henan Polytechnic University |
| Citations | 1 |
Abstract
Section titled āAbstractāIn this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.