Polycrystalline diamond RF MOSFET with MoO3 gate dielectric
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2017-12-01 |
| Journal | AIP Advances |
| Authors | Zeyang Ren, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Dazheng Chen |
| Institutions | Xidian University |
| Citations | 6 |
Abstract
Section titled āAbstractāWe report the radio frequency characteristics of the diamond metal-oxide-semiconductor field effect transistor with MoO3 gate dielectric for the first time. The device with 2-Ī¼m gate length was fabricated on high quality polycrystalline diamond. The maximum drain current of 150 mA/mm at VGS = -5 V and the maximum transconductance of 27 mS/mm were achieved. The extrinsic cutoff frequency of 1.2 GHz and the maximum oscillation frequency of 1.9 GHz have been measured. The moderate frequency characteristics are attributed to the moderate transconductance limited by the series resistance along the channel. We expect that the frequency characteristics of the device can be improved by increasing the magnitude of gm, or fundamentally decreasing the gate-controlled channel resistance and series resistance along the channel, and down-scaling the gate length.