First-Principles Study of Charge Diffusion between Proximate Solid-State Qubits and Its Implications on Sensor Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-03-27 |
| Journal | Physical Review Letters |
| Authors | JyhāPin Chou, ZoltĆ”n Bodrog, ĆdĆ”m Gali |
| Institutions | Budapest University of Technology and Economics, HUN-REN Wigner Research Centre for Physics |
| Citations | 23 |
Abstract
Section titled āAbstractāSolid state qubits from paramagnetic point defects in solids are promising\nplatforms to realize quantum networks and novel nanoscale sensors. Recent\nadvances in materials engineering make possible to create proximate qubits in\nsolids that might interact with each other, leading to electron spin/charge\nfluctuation. Here we develop a method to calculate the tunneling-mediated\ncharge diffusion between point defects from first principles, and apply it to\nnitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in\nquantitative agreement with previous experimental data. Our results suggest\nthat proximate neutral and negatively charged NV defect pairs can form an\nNVāNV molecule. A tunneling-mediated model for the source of decoherence of\nthe near-surface NV qubits is developed based on our findings on the\ninteracting qubits in diamond.\n