Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-06-05 |
| Journal | Materials science forum |
| Authors | Yuta Abe, T. Umeda, Mitsuo Okamoto, Shinobu Onoda, Moriyoshi Haruyama |
| Institutions | Gunma University, National Institute of Advanced Industrial Science and Technology |
| Citations | 2 |
Abstract
Section titled āAbstractāWe investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSs only in 4H-SiC/SiO 2 interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO 2 interfaces.