Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-06-05 |
| Journal | Materials science forum |
| Authors | Khaled Driche, Hitoshi Umezawa, Shinya Ohmagari, Hajime Okumura, Yoshiaki Mokuno |
| Institutions | National Institute of Advanced Industrial Science and Technology, UniversitƩ Grenoble Alpes |
Abstract
Section titled āAbstractāLateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.