Structural characterization and emission properties of phosphorus-doped NCD films
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-07-01 |
| Authors | Hiromitsu Kato, Takatoshi Yamada, Yasushi Ohkawa, Masahiko Ogura, Toshiharu Makino |
| Institutions | Photonics Electronics Technology Research Association |
Abstract
Section titled “Abstract”Phosphorus-doped NCD films were grown on n- type silicon substrate by plasma-enhanced CVD with H <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> , CH <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>4</sub> and PH <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> gas mixture for cold cathode application. The structure properties were characterized by Raman spectroscopy with a green laser of 532 nm at room temperature, scanning electron microscope, transmission electron microscope, and electron energy-less spectroscopy. Grown films show a good conductivity and have a typical structure with a combination of sp3 diamond gains with size around 20-100 nm and sp2 grain boundaries. The electron emission properties were characterized as comparing with single crystal, NCD film, and tip-array NCD. The tip-array NCD shows good emission properties with lower threshold electric filed and higher saturation current.