Theoretical prediction electronic properties of Group-IV diamond nanothreads
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-07-01 |
| Journal | AIP Advances |
| Authors | Min-Min Chen, Jin Xiao, Can Cao, Dan Zhang, Li-Ling Cui |
| Institutions | Institute of Semiconductors, Hunan University of Technology |
| Citations | 13 |
Abstract
Section titled āAbstractāWe have investigated the atomic and electronic structures, and carrier mobility on Group-IV diamond nanothreads (DNTs-C, DNTs-SiC, DNTs-Si and DNTs-Ge) using density functional theory. It is shown that all of Group-IV diamond nanothreads are wide gap semiconductors (>3eV). The highest electron (hole) mobility value is even up to ā¼1.15Ć105 (1.38Ć103) cm2V-1s-1. Due to the huge difference mobility in hole and electron, DNTs-Si and DNTs-Ge can be considered as p-type semiconductors, and DNTs-C can be considered as n-type semiconductor. Our results suggest that Group-IV diamond nanothreads is a new material that can be applied in optoelectronics and nanoelectronic devices in some special conditions, such as high-temperature devices, wide-gap semiconductors, transparent conductors and so on.