Improvement Of The Harmonic Distortion By Using Diamond Mosfet
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2018-08-01 |
| Authors | Marcelo Machado Aoyama, M. Estrada, A. Cerdeira, Jacobus W. Swart, Salvador Pinillos Gimenez |
| Institutions | Hospital de ClĂnicas da Unicamp, Centro de InvestigaciĂłn y de Estudios Avanzados del Instituto PolitĂ©cnico Nacional |
Abstract
Section titled âAbstractâThe Harmonic Distortion is an important merit figure for low-power low-voltage analog Complementary MetalOxide-Semiconductor (CMOS) integrated circuits (ICs) applications. This paper performs an experimental comparative study of the Harmonic Distortion between the Diamond (Hexagonal gate shape, DM) and Conventional MOSFET (Rectangular gate geometry, CM) by using the commercial 0.18 ÎŒm Bulk CMOS ICs manufacturing process from TSMC. The Integral Function Method is used to obtain the total harmonic distortion (THD) of MOSFETs. The main results of this work show that the Diamond layout style for MOSFETs, with alpha (α) angle equal to 135° can improve the THD about 22% as compared to the one measured in CM counterpart.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
Section titled âReferencesâ- 2012 - The Protons Radiation-Robustness Of Integrated Circuits By Using The Diamond Layout Style