Room temperature GaN bonding by surface activated bonding methods
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-08-01 |
| Authors | Fengwen Mu, Tadatomo Suga |
| Institutions | The University of Tokyo |
| Citations | 6 |
Abstract
Section titled āAbstractāIn this work, both GaN-Si and GaN-diamond bonding at room temperature were achieved by surface activated bonding (SAB) methods. In the GaN-Si bonding by standard SAB, the results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy. Both of the structure and composition of the two kinds of GaN-Si interfaces were investigated to understand the bonding mechanisms. In the GaN-diamond bonding by modified SAB using an intermediate Si nano-layer, a uniformly seamless bonding interface was achieved. The GaN-diamond bonded structure is expected to be helpful for the applications of high-power GaN devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1999 - Wafer direct bonding: tailoring adhesion between brittle materials [Crossref]