NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-09-24 |
| Journal | physica status solidi (a) |
| Authors | M. A. Lobaev, А. М. Горбачев, С. А. Богданов, A. L. Vikharev, D.B. Radishev |
| Institutions | Institute for Physics of Microstructures, Institute of Applied Physics |
| Citations | 24 |
Abstract
Section titled “Abstract”The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 10 19 cm −3 . The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2014 - Quantum Information Processing with Diamond: Principles and Applications