Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-11-19 |
| Journal | Optical Materials Express |
| Authors | George A. Chappell, Benoit Guilhabert, Thor Garcia, Kuaile Zhao, I. M. Watson |
| Institutions | University of Strathclyde, City College of New York |
Abstract
Section titled āAbstractāWide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-Āµm-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 Āµm 2 , similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at ā¼520 nm and a thermal redshift of 4 nm with ā¼3.6 MWm ā2 continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices.