Numerical Simulations of Diamond Cross-Section Germanium Nanowire Transistors for CMOS Compatible Assembly
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-10-01 |
| Authors | Guanqing Wang, Hao-Yu Kong, Liang-Kui Liu, Lei Sun |
| Institutions | Peking University, Institute of Microelectronics |
Abstract
Section titled āAbstractāThe properties of germanium nanowire transistors (DNWTs) with diamond cross section are studied numerically. Ge nanowire channels can be obtained by three isotropic/anisotropic etching steps. The working mechanism of DNWTs and the influence of physical parameters are studied. The results show that the current of DNWT is mainly concentrated in the center of the channel and extends to the corner at higher gate voltage. DNWT has a larger cross section than the corresponding triangular nanowires, so it has a higher leakage current. The moderate design of DNWT is less affected by the short channel effect and the subthreshold slope is lower.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2015 - VLSI Symp