High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-11-12 |
| Journal | IEEE Journal of the Electron Devices Society |
| Authors | Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang |
| Institutions | ORCID, Xidian University |
| Citations | 34 |
Abstract
Section titled āAbstractāHigh performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at V<sub>GS</sub> = V<sub>DS</sub> = -4.5 V and an on-resistance of 65.39 Ω·mm. The transconductance keeps increasing when V<sub>GS</sub> shifts from VTH toward more negative direction, and reaches the record high value of 20 mS/mm at V<sub>GS</sub> of -4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of -4 V <; V<sub>GS</sub> <; -2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric.