Progress Toward Diamond Power Field‐Effect Transistors (Phys. Status Solidi A 22∕2018)
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-11-01 |
| Journal | physica status solidi (a) |
| Authors | M. W. Geis, Travis C. Wade, C.H. Wuorio, Theodore H. Fedynyshyn, Bradley Duncan |
| Institutions | MIT Lincoln Laboratory, Massachusetts Institute of Technology |
| Citations | 1 |
Abstract
Section titled “Abstract”Diamond Field-Effect Transistors Diamond’s properties (highest thermal conductivity, high hole & electron mobilities, & high electric breakdown field) predict that diamond field-effect transistors (FETs) will have superior high-power high-frequency performance over FETs formed in other semiconductors. However, still some technical issues exist for FETs and diamond substrates. Article number 1800681 by Michael W. Geis, Travis C. Wade, and co-workers reviews the state of the art for FET and substrate development. Cover picture: Diamond growth at the ASU Research Park, photo by Franz A. Koeck.