Recent advancement of GaN HEMT with InAlGaN barrier layer and future prospects of A1N-based electron devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2018-12-01 |
| Authors | Junji Kotani, Atsushi Yamada, Toshihiro Ohki, Yuichi Minoura, Shiro Ozaki |
| Institutions | Fujitsu (Japan) |
| Citations | 8 |
Abstract
Section titled āAbstractāThe high-power operation of InAlGaN/GaN high-electron-mobility transistor (HEMT) amplifiers in the wide-frequency range from the S-band to the W-band has been achieved. A re-grown n <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>+</sup> -GaN contact layer and an InGaN back-barrier layer was employed for the W-band GaN HEMT amplifiers. For the S-band, 2-dimensional electron gases (2DEG) mobility was improved using atomically flat AlGaN spacer layers. This technology allows us to reduce the 2DEG densities maintaining the low access resistance, which contributes to the lower electric-field concentration at the edge of gate electrodes i.e. enables high voltage operation. Furthermore, a diamond heat spreader was introduced to decrease the thermal resistance and we successfully confirmed the further improvement in the output power density. Finally, AlN-based next generation devices are proposed and the lower thermal resistance are expected compared to the conventional GaN/SiC structures.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2015 - Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz
- 2017 - Surface activated bonding of SiC/Diamond for thermal management of GaN devices
- 2018 - Thermal Analysis of GaN-HEMT/SiC on Diamond by Surface Activated Bonding