Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2018-12-01 |
| Journal | Inorganic Materials |
| Authors | В. С. Бормашов, С. А. Тарелкин, С.Г. Буга, А. П. Волков, А. В. Голованов |
| Institutions | Technological Institute for Superhard and Novel Carbon Materials, Moscow Institute of Physics and Technology |
| Citations | 6 |
Abstract
Section titled “Abstract”The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut plates was varied in a range of 2 × 1015-3 × 1017 cm-3 by varying the concentration of boron in the growth mixture (0.0004-0.04 at %). Thin rectangular plates with the uniform concentration of boron and free from extended structural defects are cut out by a laser after the X-ray topography and mapping of UV luminescence. The concentrations of donors and acceptors in the samples are calculated from the data of the Hall effect and capacitance-voltage characteristics. The obtained results correlate with the concentration of boron in the growth mixture. The minimum compensation ratio of acceptors with donors (below 1%) is observed in the crystals grown with the concentration of boron in the growth mixture of 0.002 at %. The ratio increases when the amount of boron is increased or decreased. The samples grown at such a concentration of boron have the maximum mobility of charge carriers (2200 cm2/(V s) at T = 300 K and 7200 cm2/(V s) at T = 180 K). The phonon scattering of holes dominates throughout the range of temperatures (180-800 K), while the scattering by point defects (neutral and ionized atoms of the impurity) is insignificant. The diamond crystals which are grown from a mixture containing 0.0005-0.002 at % boron and have perfect quality and a lattice mechanism of scattering can be considered as a reference semiconductor.