Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2019-01-11 |
| Journal | Applied Physics Express |
| Authors | Minoru Nakamura, Susumu Murakami, Haruhiko Udono |
| Institutions | Hitachi (Japan), Ibaraki University |
| Citations | 4 |
Abstract
Section titled âAbstractâHigh concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have measured the concentrations of these products by deep-level transient spectroscopy in the samples diffused with various concentrations of nickel. From the close examination of the depth profiles of the products and the anneal-out temperature of the DDC, this species is found to be the substitutional nitrogen and the structure molecule-like split nitrogen interstitials is suggested for the N-V complex.