Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-02-14 |
| Journal | Scientific Reports |
| Authors | Michaela SojkovĆ”, Peter Å iffaloviÄ, Oleg Babchenko, G. Vanko, Edmund DobroÄka |
| Institutions | Institute of Physics of the Slovak Academy of Sciences, Institute of Electrical Engineering of the Slovak Academy of Sciences |
| Citations | 24 |
Abstract
Section titled āAbstractāAbstract The last few decades faced on the fabrication of advanced engineering materials involving also different composites. Here, we report on the fabrication of few-layer molybdenum disulfide on top of thin polycrystalline diamond substrates with a high specific surface area. In the method, pre-deposited molybdenum coatings were sulfurized in a one-zone furnace at ambient pressure. As-prepared MoS 2 layers were characterized by several techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We found out that the initial thickness of Mo films determined the final c-axis crystallographic orientation of MoS 2 layer as previously observed on other substrates. Even though it is well-known that Mo diffuses into diamond at elevated temperatures, the competing sulfurization applied effectively suppressed the diffusion and a chemical reaction between molybdenum and diamond. In particular, a Mo 2 C layer does not form at the interface between the Mo film and diamond substrate. The combination of diamond high specific surface area along with a controllable layer orientation might be attractive for applications, such as water splitting or water disinfection.