Superinjection in diamond homojunction P-I-N diodes
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-02-08 |
| Journal | Semiconductor Science and Technology |
| Authors | Igor A. Khramtsov, Dmitry Yu. Fedyanin, Igor A. Khramtsov, Dmitry Yu. Fedyanin |
| Institutions | Moscow Institute of Physics and Technology |
| Citations | 17 |
Abstract
Section titled āAbstractāDiamond and many newly emerged semiconductor materials show outstanding\noptical and magnetic properties. However, they cannot be as efficiently doped\nas silicon or gallium arsenide, which limits their practical applicability.\nHere, we report a superinjection effect in diamond p-i-n diodes, which gives\nthe possibility to inject orders of magnitude more electrons into the i-region\nof the diode than the doping of the n-type injection layer allows. Moreover, we\nshow that the efficiency of electron injection can be further improved using an\ni-p grating implemented in the i-region. The predicted superinjection effect\nenables to overcome fundamental limitations related to the high activation\nenergy of donors in diamond and gives the possibility to design\nhigh-performance devices.\n