Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-03-01 |
| Journal | International Journal of High Speed Electronics and Systems |
| Authors | Md. Nazmul Hasan, Edward Swinnich, JungāHun Seo |
| Institutions | University at Buffalo, State University of New York |
| Citations | 19 |
Abstract
Section titled āAbstractāIn recent years, the emergence of the ultrawideābandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, Ī²-Ga 2 O 3 , and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, Ī²-Ga 2 O 3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on Ī²-Ga 2 O 3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.