Creation and Migration of Intrinsic Defects in Si‐Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-04-04 |
| Journal | physica status solidi (a) |
| Authors | Kaiyue Wang, Senchuan Ding, Yufei Zhang, Hongxing Wang, Yuming Tian |
| Institutions | Taiyuan University of Science and Technology, Xi’an Jiaotong University |
| Citations | 2 |
Abstract
Section titled “Abstract”In this study, low temperature micro‐photoluminescence technology is used to investigate the development and migration of intrinsic defects in Si‐doped diamond. The results demonstrate that NV and Si‐V luminescence are weakened due to the recombination of self‐interstitials created by electron irradiation in diamond. After annealing at high temperatures, interstitial‐related centers disappear and the vacancy migrate significant distances to isolated N and Si atoms for conversion into NV and Si‐V centers.