Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-01-01 |
| Journal | 等离子体科学与技术：英文版 |
| Authors | Liu, Dan Dan, Gou, Li, Junguo |
Abstract
Section titled “Abstract”Boron-doped nanocrystalline diamond（NCD） exhibits extraordinary mechanical properties and chemical stability,making it highly suitable for biomedical applications.For implant materials,the impact of boron-doped NCD films on the character of cell growth（i.e.,adhesion,proliferation） is very important.Boron-doped NCD films with resistivity of 10-2Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition（MPCVD） process with H2bubbled B2O3.The crystal structure,diamond character,surface morphology,and surface roughness of the boron-doped NCD films were analyzed using different characterization methods,such as X-ray diffraction（XRD）,Raman spectroscopy,scanning electron microscopy（SEM） and atomic force microscopy（AFM）.The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope（SKFM）.The cytotoxicity of films was studied by in vitro tests,including fluorescence microscopy,SEM and MTT assay.Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates.MG-63 cells adhered well and exhibited a significant growth on the surface of films,suggesting that the boron-doped NCD films were non-toxic to cells.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”- DOI: None