Ultra Wide Band Gap Semiconductors for Power Control and Conversion
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2019-04-22 |
| Journal | IEEE Journal of Photovoltaics |
| Authors |
Abstract
Section titled âAbstractâIEEE Transactions on Electron Devices on âUltra Wide Band Gap Semiconductors for Power Control and ConversionâElectronics for power control and conversion is presently going through a renaissance, with new device concepts, extensions of known concepts to new materials, and new applications emerging simultaneously.Fundamental materials-level work in alpha-and beta-Ga 2 O 3 , diamond, Al(Ga)N-channel devices, BN, and other ultra-wide band gap materials (e.g. with band gaps well above that of SiC or GaN) have begun to produce device results commensurate with the fundamental advantages that these material promise for power control and conversion applications.Applications of these new devices include automotive, data center power management, grid control, industrial and locomotive traction control, and others.Despite the tremendous progress in this area, however, much remains to be understood.The role of intrinsic and extrinsic defects in these materials on device performance, optimal strategies for device design and fabrication, surface passivation and dielectric materials suitable for the high electric fi elds supported by these materials, device structures and concepts for achieving the best possible electrical performance, appropriate approaches to thermal management, and the potential and challenges of integration of these devices with other semiconductors for system implementation are all areas in which rapid progress is being made.This Special Issue of the IEEE Transactions on Electron Devices will feature the most recent developments and the state of the art in the fi eld of ultra wide band gap semiconductors and devices for power control and conversion, including both experimental results and theoretical developments.