Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-05-10 |
| Journal | Optica |
| Authors | Yu-Chen Chen, Benjamin Griffiths, Laiyi Weng, Shannon S. Nicley, Shazeaa N. Ishmael |
| Citations | 147 |
Abstract
Section titled āAbstractāAtomic defects in wide band gap materials show great promise for development\nof a new generation of quantum information technologies, but have been hampered\nby the inability to produce and engineer the defects in a controlled way. The\nnitrogen-vacancy (NV) color center in diamond is one of the foremost\ncandidates, with single defects allowing optical addressing of electron spin\nand nuclear spin degrees of freedom with potential for applications in advanced\nsensing and computing. Here we demonstrate a method for the deterministic\nwriting of individual NV centers at selected locations with high positioning\naccuracy using laser processing with online fluorescence feedback. This method\nprovides a new tool for the fabrication of engineered materials and devices for\nquantum technologies and offers insight into the diffusion dynamics of point\ndefects in solids.\n