Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-05-14 |
| Journal | International Journal of Numerical Modelling Electronic Networks Devices and Fields |
| Authors | Yongbo Chen, Yuehang Xu, Jianjun Zhou, Yuechan Kong, Tangsheng Chen |
| Institutions | University of Electronic Science and Technology of China |
| Citations | 18 |
Abstract
Section titled “Abstract”Abstract This paper presents the temperature dependence of small signal performance of GaN‐on‐diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison, a GaN‐on‐SiC device is also investigated. These results are important for the development and application of the GaN‐on‐diamond HEMT technology.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2014 - GaN‐on‐diamond: the next GaN