Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-06-17 |
| Journal | Applied Physics Letters |
| Authors | Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi |
| Institutions | National Institute of Advanced Industrial Science and Technology, Kanazawa University |
| Citations | 30 |
Abstract
Section titled āAbstractāWe investigated the phosphorus concentration (NP) dependence of the field-effect mobility Ī¼FE and interface state density Dit in inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). The inversion channel diamond MOSFETs are potentially applicable in high-frequency, high-current, and high-voltage devices because of the materialās excellent properties such as a wide bandgap, high breakdown electric field, high carrier mobility, and high thermal conductivity. However, the influences of device design parameters, such as NP in an n-type body and the oxide layer material, on the electrical characteristics of inversion channel diamond MOSFETs have not yet been reported. In this study, we fabricated inversion channel diamond MOSFETs using n-type bodies with various NP values. For decreased NP in the n-type body, Ī¼FE was increased, while Dit was decreased. Using the n-type body with the lowest NP of 2 Ć 1015 cmā3, the maximum Ī¼FE of 20 cm2/VĀ·s and the minimum Dit of 1 Ć 1013 cmā2Ā·eVā1 were obtained. In addition, an inverse correlation was found between Ī¼FE and Dit. Specifically, in the low-gate-voltage region of the drain current-gate voltage characteristics, Ī¼FE and Dit were strongly inversely correlated. The high Dit suggests that most holes are trapped in the interface state as strong scattering factors in the low-gate-voltage region. Lower Dit values are therefore important for obtaining higher Ī¼FE values, the same as in Si and SiC.