SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-07-31 |
| Journal | EUREKA Physics and Engineering |
| Authors | T. A. Pagava, Levan Chkhartishvili, Manana Beridze, M. R. Metskhvarishvili, Iamze Kalandadze |
| Institutions | Georgian Technical University |
| Citations | 2 |
Abstract
Section titled āAbstractāThe aim of research is studying the mechanism of n-p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration of 2Ć1014 cm-3 were studied. Uniaxial compression at temperature of 700 Ā°Š” and pressure of 25 MPa increased the dislocation density to 108 cm-2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n-p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus-divacancy complexes PV2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of Ev+0.34 eV. The found out n-p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.