A new superior electronic properties Si allotrope for power electronic device applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2024-02-21 |
| Journal | Physica Scripta |
| Authors | Yulong Wang, Baoxing Duan, Yintang Yang |
| Institutions | Xidian University |
Abstract
Section titled “Abstract”Abstract A new I −4 space group silicon allotrope is proposed in this paper. The electronics properties, mechanical properties and Ag(100)/I4Si(100) interface properties are studied using first principle calculations method. The results of the phonon show that I −4 Si is dynamically stable. Elastic constants reveal I −4 Si is dynamical stable. Electronics properties calculations reveal that the CBM and VBM of I −4 Si are at X and M point, which indicates that I −4 Si is an indirect band gap semiconductor with a high band gap of 1.95 eV. To satisfy the demands for fabricating electronic devices, the N-type doping, P-type doping and Ohmic contact are studied, too. The fermi energy level of N-type and P-type I −4 Si move into conduction band and valence band, respectively. The Schottky barrier of Ag/I-4 interface is 0.65 eV. Meanwhile, the current-voltage curve becomes highly symmetric, suggesting an Ohmic behavior of the Ag(100)/I4Si(100) interface. Critical breakdown field calculations results show that the critical breakdown field of I −4 Si is 9.05 × 10 5 V cm −1 , which is 3.02 times that of the diamond Si. Because band gap and critical breakdown field of I-4 Si are much greater than that of diamond Si, I-4 Si is potential electronic semiconductor material. Thus, I −4 Si can be applied in the field of modern power electronic device applications due to its superior electronic properties.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- **** - A 700V junction-isolated triple RESURF LDMOS with N-type top layer [Crossref]
- **** - Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping [Crossref]
- **** - Enhancement of silicon critical breakdown field by reducing the avalanche breakdown distance to improve the breakdown voltage of thin SOI device [Crossref]
- **** - SJ/RESURF LDMOST [Crossref]
- **** - Two novel silicon phases with direct band gap [Crossref]
- **** - Toward direct-gap silicon phases by the inverse band structure design approach [Crossref]
- **** - Low-energy tetrahedral polymorphs of carbon, silicon, and germanium [Crossref]
- **** - Synthesis of an open-framework allotrope of silicon [Crossref]
- **** - High-throughput calculation screening for new silicon allotropes with monoclinic symmetry [Crossref]
- **** - Six novel carbon and silicon allotropes with their potential application in photovoltaic field [Crossref]