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6CCVD Research

Boosting the Ionizing Radiation Tolerance in the Mosfets Matching by Using Diamond Layout Style

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2019-08-01
AuthorsVinicius Vono Peruzzi, William Cruz, Gabriel Augusto da Silva, Ricardo Cotrim Teixeira, L. E. Seixas
InstitutionsCentro de Tecnologia da InformaĆ§Ć£o Renato Archer, Centro UniversitĆ”rio FEI
Citations8

Abstract

Section titled ā€œAbstractā€

There are a lot of initiatives to improve the devices matching (dog bone layout, common centroid layout, dummy devices, etc.). Another layout technique, not yet used by integrated circuits (ICs) companies, is the utilization of nonconventional layout styles (hexagonal, octagonal, ellipsoidal, etc.) for MOSFETs, thanks to the Longitudinal Corner Effect (LCE), Parallel Connection of MOSFETs with different channel Lengths Effect (PAMDLE) and Deactivation of Parasitic MOSFETs in Birdā€™s Beaks Regions (DEMPAMBBRE). In this context, this paper describes an experimental comparative study of the devices matching of Metal-Oxide-Semiconductor Field Effect Transistors (130 nm Silicon-Germanium Bulk), n-type (nMOSFETs) implemented with Diamond (hexagonal) and standard rectangular layout styles, regarding a sample of 189 transistors which were exposure to different X-rays ionizing radiations. Considering some relevant electrical parameters considered in this work, the results indicate that the Diamond layout style with Ī± angle equal to 90Ā° is capable of boosting by at least 40% the device matching in relation to one observed with standard (rectangular) MOSFET counterparts in irradiation environment , considering they present the same gate areas, channel widths and bias conditions. Therefore, the Diamond layout style can be considered another hardness-by-design (HBD) layout strategy to boost the electrical performance and ionizing radiation tolerance of MOSFETs.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Invited paper: Innovative Layout Styles to Boost the Mosfet Electrical Performance
  2. 2014 - OCTO SOI MOSFET as Application of Hardness-By-Design to Improve X-ray Radiation Tolerance

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