Corrugated channel In<inf>0.8</inf>Ga<inf>0.2</inf>As quantum well transistors for low power logic applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2017-06-01 |
| Authors | J. A. Smith, Michael Barth, Kai Ni, Mirco Cantoro, Dong‐Won Kim |
| Institutions | Pennsylvania State University, University of Notre Dame |
Abstract
Section titled “Abstract”In <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>x</inf> Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>1−x</inf> As MOSFETs with superior carrier transport properties promise to deliver high current at reduced supply voltages [1-2]. Strained III-V quantum well FinFETs (QW-FF) have been investigated [3-4] as feasible pathways to low power logic. For sub-7 nm nodes, challenges in maintaining electrostatic integrity in FFs has led to the proposal of faceting the FF channel (corrugated channel) to produce diamond-shaped [7-8] electrically gate-all-around (eGAA) channels. In this work, we evaluate the impact of corrugating of channel width (Z <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>eff</inf> ) in In <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>0.8</inf> Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>0.2</inf> As QW transistors on effective drive current (I <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>eff</inf> ) gain and short channel effect (SCE) improvement for 7nm node.