Evaluation of electrical and thermal properties of single crystalline diamond with large area of $18 mathbf{mm}times 18 mathbf{mm}$ for power module
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-09-01 |
| Authors | K. Koseki, Takashi Matsumae, Hitoshi Umezawa, Hideki Takagi, Yasunori Tanaka |
| Institutions | National Institute of Advanced Industrial Science and Technology |
Abstract
Section titled āAbstractāDiamond substrate was evaluated from the viewpoint of voltage withstand and thermal performance. High voltage of up to 30 kV was successfully applied without electrical breakdown to thin substrate of 300 Ī¼m. Superior thermal performance of 0.95 K/W compared to conventional materials (silicon nitride and aluminum nitride) was also measured with a single-crystalline mosaic diamond substrate with large area of 18 mmĆ18 mm.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 0 - Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-channel IE-IGB Ts
- 0 - Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IGBT