Investigation of Ion Channeling and Scattering for Single‐Ion Implantation with High Spatial Resolution
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-09-12 |
| Journal | physica status solidi (a) |
| Authors | Nicole Raatz, Clemens Scheuner, Sébastien Pezzagna, Jan Meijer |
| Institutions | Leipzig University |
| Citations | 21 |
Abstract
Section titled “Abstract”The production of quantum systems based on single atoms in a solid requires new techniques in ion implantation. A pierced atomic force microscope (AFM) tip is developed as a nanoaperture to implant single ions with nanometer resolution at kinetic energies below 10 keV to avoid ion straggling. This technique is already used for a large number of novel quantum devices in diamonds. However, to further improve the resolution, scattering at the aperture is identified as the main limiting factor of lateral placement accuracy and ion channeling effect as the main factor for depth resolution at low kinetic energy. The simulations of the scattering effects show that the fraction of scattered ions depends not only on the cone angle and shape of the hole, but also on the beam divergence and the gap between AFM tip and sample. The decrease in axial precision due to ion channeling depends mainly on the surface roughness and the incident angle of the ion beam. For a smooth (100) surface, a 12°‐inclined beam that provides the best conditions for highest resolution is found.