Electroluminescence of thin film p-i-n diodes based on a-SiC -H with integrated Ge nanoparticles
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-12-01 |
| Journal | The European Physical Journal Applied Physics |
| Authors | Z. RemeÅ”, JiÅĆ StuchlĆk, The-ha Stuchlikova, Jaroslav KupÄıĢk, V. Mortet |
| Institutions | Czech Academy of Sciences, Institute of Physics, Russian Academy of Sciences |
| Citations | 8 |
Abstract
Section titled āAbstractāHydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy-dispersive X-ray spectroscopy analyses. Current-voltage ( I-V ) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-SiC:H significantly deteriorates diode I-V characteristic.