Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-01-05 |
| Journal | ECS Journal of Solid State Science and Technology |
| Authors | Hyun Kim, С. А. Тарелкин, A. Y. Polyakov, S. Yu. Troschiev, Sergey Nosukhin |
| Institutions | Korea University, National University of Science and Technology |
| Citations | 48 |
Abstract
Section titled “Abstract”The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β -Ga 2 O 3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 10 7 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W −1 ), rejection ratio (8.5 × 10 3 ), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/ β -Ga 2 O 3 p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β -Ga 2 O 3 ) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.