Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-01 |
| Authors | Assaad El Helou, Marko J. Tadjer, Karl D. Hobart, Peter E. Raad |
| Institutions | United States Naval Research Laboratory, Southern Methodist University |
| Citations | 1 |
Abstract
Section titled āAbstractāGaN high power devices experience substantial self-heating that drives operation temperatures beyond a safe and reliable limit, which has led to the consideration of high conductivity substrates. This study presents a coupled experimental and numerical investigation of the effectiveness of CVD-Diamond as a substrate for GaN HEMTs. The study uses a novel that optimizes a thermal model using an experimentally observed thermal response. The model is then used to assess the effect of the GaN-Di interface on the thermal response of GaN-Di HEMTs, which would serve as a guideline for future developments in GaN and Di growth.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2007 - A Coupled Thermoreflectance Thermography Experimental System and Ultra-Fast Adaptive Computational Engine for the Complete Thermal Characterization of Three-Dimensional Electronic Devices: Validation