Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-04-24 |
| Journal | ECS Transactions |
| Authors | W. S. Lau |
| Institutions | Nanyang Technological University |
| Citations | 1 |
Abstract
Section titled āAbstractāOne possible mechanism of reverse leakage current in Schottky diodes fabricated on large bandgap semiconductors like Ga 2 O 3 or diamond is Schottky emission (image force barrier lowering) at the metal-semiconductor interface. Historically, there were 2 theories regarding the image force barrier lowering effect. The authorās new idea is that the older and almost forgotten Krƶmerās theory can frequently give a much better fit to experimental data for large bandgap semiconductors like Ga 2 O 3 or diamond Schottky diodes. It is possible to define an effective dielectric constant K eff in the reverse leakage current equation and quite frequently 1 ā„ K eff ā„ Ā¼ for some large bandgap semiconductors like Ga 2 O 3 or diamond. Peripheral surface passivation is important.