Direct Bonding of GaN to Diamond Substrate at Room Temperature
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-06-01 |
| Authors | Tadatomo Suga, Fengwen Mu |
| Institutions | Waseda University, Meisei University |
| Citations | 8 |
Abstract
Section titled āAbstractāGaN-diamond integration is being paid far more attention to realize a better thermal management of GaN-HEMT device GaN-HEMT device with the increase of the requirements on high power density and high reliability. Although growth method has been widely investigated, novel bonding method bring new possibility to realize GaN-diamond integration without traditional problems. This paper reviewed the previous bonding researches for GaN-diamond integration.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2019 - High-power GaN-on-diamond HEMTs fabricated by surface-activated roomtemperature bonding