Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-09-08 |
| Journal | Applied Physics Letters |
| Authors | Takehiro Shimaoka, Hitoshi Umezawa, Kimiyoshi Ichikawa, Julien Pernot, Satoshi Koizumi |
| Institutions | Centre National de la Recherche Scientifique, National Institute of Advanced Industrial Science and Technology |
| Citations | 37 |
Abstract
Section titled āAbstractāA betavoltaic cell, which directly converts beta particles into energy, is composed of a junction diode and a beta-emitting source. Because the cells can deliver electricity over a long operation life ranging from several years to a decade, they are promising devices for applications in remote locations such as outer space, deserts, and underground areas. Herein, we report efficient energy conversion using a diamond pn junction. We characterized the betavoltaic performance under electron-beam irradiation using scanning electron microscopy and observed an open-circuit voltage of 4.26 V, a fill factor of 0.85, and a semiconductor conversion efficiency of 28%. These are the best values reported thus far for betavoltaic cells. The efficiency is close to the theoretical Shockley-Queisser efficiency limit for betavoltaic cells.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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