Control of Properties of Diamond-Like Silicon–Carbon Films
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2020-10-01 |
| Journal | Physics of the Solid State |
| Authors | A. I. Popov, А. Д. Баринов, V. M. Emets, Т. С. Чуканова, M. L. Shupegin |
| Institutions | Moscow Power Engineering Institute |
| Citations | 6 |
Abstract
Section titled “Abstract”The possibilities of control of the electrophysical and mechanical properties of amorphous diamond-like silicon-carbon films by means of structural, chemical and structural-chemical modification are considered. The magnitude of the bias voltage and its frequency during the process of film synthesis, argon pressure in working chamber and precursors with different molecular structures are used as factors of structural modification. Introduction of transition metals with the concentration up to 30-35 at % into the film is used for chemical and structural-chemical modification. The high efficiency of control of the physical properties of films by the considered methods is shown.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1977 - Amorphous and Liquid Semiconductors
- 2018 - Disordered Semiconductors: Physics and Applications [Crossref]