Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-11-10 |
| Journal | Scientific Reports |
| Authors | Nian Liu, Kohki Sugawara, Naoya Yoshitaka, Hideaki Yamada, Daisuke Takeuchi |
| Institutions | The University of Osaka, National Institute of Advanced Industrial Science and Technology |
| Citations | 54 |
Abstract
Section titled āAbstractāAbstract Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 Ī¼m/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 Ī¼m. The surface roughness measured by both scanning white light interferometer (SWLI) (84-Ī¼m square) and atomic force microscope (AFM) (5-Ī¼m square) was less than 0.5 nm S q. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.