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6CCVD Research

Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2020-12-23
JournalResults in Physics
AuthorsZeyang Ren, Zhenfang Liang, Kai Su, Yufei Xing, Jinfeng Zhang
InstitutionsWuhu Institute of Technology, Xidian University
Citations4

Abstract

Section titled ā€œAbstractā€

The normally-off hydrogen-terminated diamond metal-semiconductor field effect transistors (MESFETs) with a MoO3 passivation layer were fabricated on the CVD grown polycrystalline diamond substrate. The characteristics of the device at room temperature and 100 Ā°C, 150 Ā°C and 200 Ā°C were investigated. The device with a 2-Ī¼m gate shows a threshold voltage of āˆ’0.38 V, the maximum output current of 35 mA/mm and the transconductance of 17.4 mS/mm. The device can still work normally until 150 Ā°C, which shows great potential to be used in high temperature in the future.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2002 - High carrier mobility in single-crystal plasma-deposited diamond [Crossref]
  2. 2018 - A high frequency hydrogen-terminated diamond MISFET with FT/FMax of 70/80 GHz [Crossref]
  3. 2006 - Diamond FET using high-quality polycrystalline diamond with FT of 45 GHz and FMax of 120 GHz [Crossref]
  4. 2017 - Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y 2 O 3 oxide insulator grown by electron beam evaporator [Crossref]
  5. 2017 - Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications [Crossref]
  6. 2018 - Annealing effects on hydrogenated diamond NOR logic circuits [Crossref]
  7. 1997 - Enhancement/depletion MESFETs of diamond and their logic circuits [Crossref]
  8. 2013 - Surface transfer doping of diamond by MoO3: a combined spectroscopic and Hall measurement study [Crossref]
  9. 2017 - Diamond field effect transistors with MoO3 gate dielectric [Crossref]

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