Fabrication of Dual-Barrier Planar Structure Diamond Schottky Diodes by Rapid Thermal Annealing
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-01-20 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Juan Wang, Dan Zhao, Guoqing Shao, Zhangcheng Liu, Xiaohui Chang |
| Institutions | Taiyuan University of Science and Technology, Xiāan Jiaotong University |
| Citations | 9 |
Abstract
Section titled āAbstractāFabrication of dual-barrier planar (DBP) structure diamond Schottky barrier diodes (SBDs) with only Ni Schottky contact was carried out by rapid thermal annealing. Ni/Au narrow stripes were first patterned on p- layer and annealed at 550 Ā°C to decrease Schottky barrier height and form low barrier contact. Then, Ni/Au Schottky electrodes were deposited on the window area between stripes to serve as high barrier contact. Ti/Pt/Au ohmic contact was formed on the back side of p <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>+</sup> diamond substrate. The fabricated DBP structure SBDs exhibit low forward voltage drops compared with single high barrier diode, and reverse leakage current densities of two to three orders of magnitude smaller than that of single low barrier diode. The influence of stripes area proportion on device properties was investigated and the barrier height can be adjusted by changing dual-barrier ratio. This new device structure displays a small power dissipation of 0.54 W/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> , which is a promising technology for high power diamond diodes.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1993 - Schottky barrier rectifier including Schottky barrier regions of differing barrier heights